Search results for "laser annealing"

showing 2 items of 2 documents

Nanostructuring thin Au films on transparent conductive oxide substrates

2013

Fabrication processes of Au nanostructures on indium-tin-oxide (ITO) surface by simple, versatile, and low-cost bottom-up methodologies are investigated in this work. A first methodology exploits the patterning effects induced by nanosecond laser irradiations on thin Au films deposited on ITO surface. We show that after the laser irradiations, the Au film break-up into nanoclusters whose mean size and surface density are tunable by the laser fluence. A second methodology exploits, instead, the patterning effects of standard furnace thermal processes on the Au film deposited on the ITO. We observe, in this case, a peculiar shape evolution from pre-formed nanoclusters during the Au deposition…

NanoclusterLaser annealingMaterials scienceNanostructureFabricationNanoringPatterning effectGold depositAnnealing (metallurgy)NanotechnologyFluenceSettore ING-INF/01 - Elettronicalaw.inventionNanoclusterslawThermalDeposition stageAuGeneral Materials ScienceNanostructuringTransparent conducting filmDepositMechanical EngineeringNanoringsTransparent conductive oxides Conductive filmAnnealing temperatureCondensed Matter PhysicsLaserAu; ITO; NanostructuringFurnace annealingNanostructuresNanostructured materialFabrication proceMechanics of MaterialsOxide films GoldITO
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Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC)

2022

This paper reports on the effects of excimer laser irradiation on an aluminum (Al)-doped silicon carbide (4H-SiC) layer. Specifically, high-concentration (1 × 1020at/cm3) Al-implanted 4H-SiC samples were exposed to a few pulses of 308 nm laser radiation (pulse duration of 160 ns), with fluence varying from 1.0 to 2.8 J/cm2. As a starting point, the laser-induced modifications of the morphological, microstructural, and nanoelectrical properties of the exposed 4H-SiC surface were monitored by combining different techniques. From these investigations, an evolution of the surface morphology was observed that can be ascribed to a conversion during irradiation of the uppermost part of the 4H-SiC …

silicon carbide (4H-SiC)dopant activationSettore FIS/01 - Fisica Sperimentalelaser annealingAl-implantation
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